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Publications by J. Borysiuk

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Acta Physica Polonica A

English

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Accommodation Mechanism of InN Nanocolumns Grown on Si(111) Substrates by Molecular Beam Epitaxy

Applied Physics Letters

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Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Microstructure of GaN Grown on (111) Si by MOCVD

MRS Internet Journal of Nitride Semiconductor Research

English

Properties of GaN Epilayers Grown on Misoriented Sapphire Substrates

MRS Internet Journal of Nitride Semiconductor Research

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Size- And Shape-Controlled GaN Nanocrystals Grown on Si(111) Substrate by Reactive Epitaxy

Applied Physics Letters

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Nucleation and Growth of GaN Nanorods on Si (111) Surfaces by Plasma-Assisted Molecular Beam Epitaxy - The Influence of Si- And Mg-Doping

Journal of Applied Physics

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Smoothening of (001) and (111) Cu Films Epitaxially Grown on Si Substrates

Materials Research Society Symposium - Proceedings

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

The Electrical, Optical, and Structural Properties of GaN Epitaxial Layers Grown on Si(111) Substrate With Interlayers

Superlattices and Microstructures

Electronic Engineering

Condensed Matter Physics

Materials Science

English

Characterization of GaN Microstructures Grown by Plasma-Assisted Molecular Beam Epitaxy

English