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Publications by J. Busch
P- And N-Type Doping of MBE Grown Cubic GaN/GaAs Epilayers
MRS Internet Journal of Nitride Semiconductor Research
Incorporating Global Warming Risks in Power Sector Planning: A Case Study of the New England Region. Volume 2, Appendices
Primer on Gas Integrated Resource Planning
Related publications
Germanium Doping of Cubic GaN Grown by Molecular Beam Epitaxy
Journal of Applied Physics
Astronomy
Physics
P- And N-Type Doping of Non-Polar A-Plane GaN Grown by Molecular-Beam Epitaxy on R-Plane Sapphire
MRS Internet Journal of Nitride Semiconductor Research
Properties of GaN Epilayers Grown on Misoriented Sapphire Substrates
MRS Internet Journal of Nitride Semiconductor Research
Native Deep-Level Defects in MBE-Grown P-Type CdTe
Acta Physica Polonica A
Astronomy
Physics
Room Temperature Ferromagnetism in Cubic GaN Epilayers Implanted With Mn+ Ions
Applied Physics Letters
Astronomy
Physics
Avalanche Multiplication Noise in GaN P‐n Junctions Grown on Native GaN Substrates
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs
Materials
Materials Science
Condensed Matter Physics
Doping Concentration Dependence of the Photoluminescence Spectra of N-Type GaAs Nanowires
Applied Physics Letters
Astronomy
Physics
Temperature Dependence Studies of Er Optical Centers in GaN Epilayers Grown by MOCVD
MRS Advances
