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Publications by J. G. Fleming

Microstructure of GaN Grown on (111) Si by MOCVD

MRS Internet Journal of Nitride Semiconductor Research
1999English

Related publications

InN Nano-Column Grown on Si (111) Substrate Using Au Catalyst by MOCVD

2008English

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Acta Physica Polonica A
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Size- And Shape-Controlled GaN Nanocrystals Grown on Si(111) Substrate by Reactive Epitaxy

Applied Physics Letters
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Buffer Optimization for Crack-Free GaN Epitaxial Layers Grown on Si(1 1 1) Substrate by MOCVD

Journal of Physics D: Applied Physics
SurfacesUltrasonicsCondensed Matter PhysicsAcousticsOpticalMagnetic MaterialsFilmsCoatingsElectronic
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Growth of Vertical GaN Nano-Column on Au Droplet/Si(111) Substrate Using Pulsed Flow MOCVD Method

2007English

Temperature Dependence Studies of Er Optical Centers in GaN Epilayers Grown by MOCVD

MRS Advances
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The Electrical, Optical, and Structural Properties of GaN Epitaxial Layers Grown on Si(111) Substrate With Interlayers

Superlattices and Microstructures
Electronic EngineeringElectricalCondensed Matter PhysicsMaterials Science
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Study on AlGaN/GaN Heterostructures Grown on Si Substrate

Journal of the Vacuum Society of Japan
SurfacesInstrumentationInterfacesSpectroscopyMaterials Science
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Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

Applied Physics Letters
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