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Publications by J. S. Speck
Evidence of Nanoscale Anderson Localization Induced by Intrinsic Compositional Disorder in InGaN/GaN Quantum Wells by Scanning Tunneling Luminescence Spectroscopy
Physical Review B
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Critical Thickness for the Formation of Misfit Dislocations Originating From Prismatic Slip in Semipolar and Nonpolar III-nitride Heterostructures
APL Materials
Materials Science
Engineering
Near-Field Investigation of Spatial Variations of (202¯1¯) InGaN Quantum Well Emission Spectra
Applied Physics Letters
Astronomy
Physics
Highly Polarized Photoluminescence and Its Dynamics in Semipolar (202¯1¯) InGaN/GaN Quantum Well
Applied Physics Letters
Astronomy
Physics
Erratum: “High-Quality InAsyP1−y Step-Graded Buffer by Molecular-Beam Epitaxy” [Appl. Phys. Lett. 82, 3212 (2003)]
Applied Physics Letters
Astronomy
Physics
Buried Stressors in Nitride Semiconductors: Influence on Electronic Properties
Journal of Applied Physics
Astronomy
Physics
Carbon Doping of GaN With CBr4 in Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy
Journal of Applied Physics
Astronomy
Physics
Dislocation-Free GaN Nanowires
Microscopy and Microanalysis
Instrumentation
Mapping Misorientation and Crystallographic Tilt in GaN Layers via Polychromatic Microdiffraction
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Atomic Force Microscopy Observation of Threading Dislocation Density Reduction in Lateral Epitaxial Overgrowth of Gallium Nitride by MOCVD
MRS Internet Journal of Nitride Semiconductor Research
