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Publications by J. Y. Tsao
Surface Roughening of Ge(001) During 200 eV Xe Ion Bombardment and Ge Molecular Beam Epitaxy
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Surfaces
Films
Interfaces
Condensed Matter Physics
Coatings
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Ordered 2D Structure Formed Upon the Molecular Beam Epitaxy Growth of Ge on the Silicene/Ag(111) Surface
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Growth of Fe3Si/Ge/Fe3Si Trilayers on GaAs(001) Using Solid-Phase Epitaxy
Applied Physics Letters
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Antiphase Boundaries on Low-Energy-Ion Bombarded Ge(001)
Surface Science
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Surface Roughening During Low Temperature Si(100) Epitaxy
Journal of Applied Physics
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Control of the Surface Superstructures on the Ge(001) Clean Surface
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Electronic Structure of Ge-Si Superlattices Grown on Ge (001)
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Phosphorus Incorporation During Si(001):P Gas-Source Molecular Beam Epitaxy: Effects on Growth Kinetics and Surface Morphology
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Air Stabilized (001)p‐type GaAs Fabricated by Molecular Beam Epitaxy With Reduced Surface State Density
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Adsorption of Te on Ge(001): Density-Functional Calculations
Physical Review B