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Publications by J. Yokoi
Reduction of Schottky Barrier Height for N-Type Ge Contact by Using Sn Electrode
Related publications
Characteristics of N-Type Asymmetric Schottky-Barrier Transistors With Silicided Schottky-Barrier Source and Heavily N-Type Doped Channel and Drain
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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High-Quality NiGe/Ge Diodes for Schottky Barrier MOSFETs
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Electrical Properties of Ge Crystals and Effective Schottky Barrier Height of NiGe/Ge Junctions Modified by P and Chalcogen (S, Se, or Te) Co-Doping
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Minority Carrier Trap in N-Type 4H–SiC Schottky Barrier Diodes
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Inhomogeneous Barrier Height Effect on the Current–voltage Characteristics of an Au/N-InP Schottky Diode
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Pressure Dependence of Schottky Barrier Height at Pt/GaAs Interface
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Pressure-Dependent Schottky Barrier at the Metal-Nanotube Contact
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Dependence of Ni/AlGaN Schottky Barrier Height on Al Mole Fraction
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Effective Schottky Barrier Lowering of Ni Silicide/P-Si(100) Using an Ytterbium Confinement Structure for High Performance N-Type MOSFETs
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