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Publications by Jean-Daniel Gautier

Comprehensive Characterization of InGaAs–InP Avalanche Photodiodes at 1550 Nm With an Active Quenching ASIC

IEEE Journal of Quantum Electronics
Electronic EngineeringCondensed Matter PhysicsMolecular Physics,ElectricalAtomicOptics
2009English

Related publications

Photosensitivity and Noise of Ultrafast InGaAs/InP Avalanche Photodiodes

Lithuanian Journal of Physics
AstronomyPhysics
2006English

Laser Ranging at 1550 Nm With 1-GHz Sine-Wave Gated InGaAs/InP APD Single-Photon Detector

Optics Express
OpticsAtomicMolecular Physics,
2011English

InP∕InGaAs SHBTs With 75 Nm Collector and fT>500 GHz

Electronics Letters
Electronic EngineeringElectrical
2003English

Optical Absorption of Silicon Nitride Membranes at 1064 Nm and at 1550 Nm

Physical Review D
AstronomyPhysics
2017English

An Absolute Radiometer Based on InP Photodiodes

2010English

AlxGa1−xN-based Avalanche Photodiodes With High Reproducible Avalanche Gain

Applied Physics Letters
AstronomyPhysics
2007English

Time Resolved Gain and Excess Noise Properties of InGaAs/InAlAs Avalanche Photodiodes With Cascaded Discrete Gain Layer Multiplication Regions

Journal of Applied Physics
AstronomyPhysics
2013English

Measurement of Deep Levels at InGaAs(P)/InP Heterojunctions

1990English

Silicon Avalanche Photodiodes Developed at the Institute of Electron Technology

2004English

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