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Publications by Jean-Luc Rouviere
The Addition of Strain in Uniaxially Strained Transistors by Both SiN Contact Etch Stop Layers and Recessed SiGe Sources and Drains
Journal of Applied Physics
Astronomy
Physics
Related publications
Amorphization Threshold in Si-Implanted Strained Sige Alloy Layers
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Ion Beam Induced Strain Relaxation in Pseudomorphous Epitaxial SiGe Layers
Study of Strain Relaxation in Si/SiGe Metal-Oxide-Semiconductor Field-Effect Transistors
Journal of Applied Physics
Astronomy
Physics
Control of Sn Precipitation and Strain Relaxation in Compositionally Step-Graded Ge1-xSnxBuffer Layers for Tensile-Strained Ge Layers
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Nanoscale Patterning Induced Strain Redistribution in Ultrathin Strained Si Layers on Oxide
Nanotechnology
Mechanics of Materials
Electronic Engineering
Mechanical Engineering
Materials Science
Nanoscience
Electrical
Bioengineering
Nanotechnology
Chemistry
The Features of Phonon Component of Linear Dichroism in Uniaxially Strained Silicon Crystals
Semiconductor Physics, Quantum Electronics and Optoelectronics
Electronic Engineering
Optics
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Electronic
Studies of Thin Strained InAs, AlAs, and AlSb Layers by Spectroscopic Ellipsometry
Journal of Applied Physics
Astronomy
Physics
Defect Identification in Strained Si/SiGe Heterolayers for Device Applications
Journal of Physics D: Applied Physics
Surfaces
Ultrasonics
Condensed Matter Physics
Acoustics
Optical
Magnetic Materials
Films
Coatings
Electronic
Extremely High Selective Etching of Porous Si for Single Etch-Stop Bond-And-Etch-Back SOI
