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Publications by Jianxiang Tang
A Breakdown Enhanced AlGaN/GaN Schottky Barrier Diode With the T-Anode Position Deep Into the Bottom Buffer Layer
Micromachines
Control
Systems Engineering
Electrical
Mechanical Engineering
Electronic Engineering
Related publications
GaN Schottky Barrier Photodetectors With SiN∕GaN Nucleation Layer
Applied Physics Letters
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GaN-Based Schottky Diode
Ultralow Reverse Leakage Current in AlGaN/GaN Lateral Schottky Barrier Diodes Grown on Bulk GaN Substrate
Applied Physics Express
Engineering
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Impact of Surface Treatment on Metal-Work-Function Dependence of Barrier Height of GaN-on-GaN Schottky Barrier Diode
AIP Advances
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Switching Characteristics of a Diamond Schottky Barrier Diode
IEICE Electronics Express
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Condensed Matter Physics
Optical
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Magnetic Materials
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Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate
Infrared Reflection of GaN and AlGaN Thin Film Heterostructures With AlN Buffer Layers
Applied Physics Letters
Astronomy
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Effects of High-Temperature AIN Buffer on the Microstructure of AlGaN/GaN HEMTs
Semiconductors
Condensed Matter Physics
Optics
Molecular Physics,
Optical
Atomic
Magnetic Materials
Electronic
Physical Based Schottky Barrier Diode Modeling for THz Applications
