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Publications by JinCheng Zhang

Interaction Between Si Doping and the Polarization-Induced Internal Electric Field in the AlGaN/GaN Superlattice

Applied Physics Letters

English

Related publications

Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures

Journal of Applied Physics

English

Field Plated AlGaN/GaN-on-Si HEMTs for High Voltage Switching Applications

Journal of the Korean Physical Society

English

Breakdown Mechanism in AlGaN/GaN HEMTs on Si Substrate

English

ANALYSIS OF WAVE FUNCTION, ENERGY AND TRANSMISSION COEFFICIENTS IN GaN/ALGaN SUPERLATTICE NANOSTRUCTURES

Progress In Electromagnetics Research

English

Study on AlGaN/GaN Heterostructures Grown on Si Substrate

Journal of the Vacuum Society of Japan

Instrumentation

Materials Science

English

Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs

MRS Internet Journal of Nitride Semiconductor Research

English

Interplay Between C-Doping, Threading Dislocations, Breakdown, and Leakage in GaN on Si HEMT Structures

English

Polarization Effects of GaN and AlGaN: Polarization Bound Charge, Band Bending, and Electronic Surface States

Journal of Electronic Materials

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Two-Dimensional Electron Gases Induced by Spontaneous and Piezoelectric Polarization Charges in N- And Ga-Face AlGaN/GaN Heterostructures

Journal of Applied Physics

English