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Publications by Jinqiao Xie
Ion-Implant Isolated Vertical GaN P-N Diodes Fabricated With Epitaxial Lift-Off From GaN Substrates (Phys. Status Solidi a 4∕2019)
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Related publications
GaN P-N Structures Fabricated by Mg Ion Implantation
MRS Internet Journal of Nitride Semiconductor Research
Normally-Off P-GaN Gate InAlN/GaN HEMTs Grown on Silicon Substrates
Reflectivity of Plasmon-Phonon Modes in Grating-Coupled AlGaN/GaN Heterostructures Grown on SiC and GaN Substrates (Phys. Status Solidi B 5/2018)
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Avalanche Multiplication Noise in GaN P‐n Junctions Grown on Native GaN Substrates
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
Vertical GaN Schottky Diodes Grown on Highly Conductive Ammono-GaN Substrate
Acta Physica Polonica A
Astronomy
Physics
Epitaxial Perovskite Oxide Devices Fabricated by Lift-Off Technology
Simulation of Nonpolar P-GaN/I-N/N-GaN Solar Cells
International Journal of Photoenergy
Materials Science
Renewable Energy
Molecular Physics,
Sustainability
Atomic
Chemistry
Optics
the Environment
Vertical-Injection Ultraviolet Light-Emitting Diodes With GaN-Free Structures
Growth of Nanocrystalline MoSe2 Monolayers on Epitaxial Graphene From Amorphous Precursors (Phys. Status Solidi B 2/2019)
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials