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Publications by Joël Cagnon
III-V/Ge Channel Engineering for Future CMOS
Related publications
Theory of Hole Mobility in Strained Ge and III-V P-Channel Inversion Layers With High-Κ Insulators
Journal of Applied Physics
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Heterogeneously Integrated III-V on Silicon for Future Nanoelectronics
ECS Meeting Abstracts
Comparative Study on Influence of Subband Structures on Electrical Characteristics of III-V Semiconductor, Ge and Si Channel N-MISFETs
Quantum Simulation of C-V and I-V Characteristics in Ge and III-V Materials/High-Κ MOS Devices
Materials Research Society Symposium - Proceedings
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Atomic Layer Deposition of High-K Dielectric Layers on Ge and III-V MOS Channels
ECS Meeting Abstracts
Atomic Layer Deposition of High-K Dielectric Layers on Ge and III-V MOS Channels
V-Models for Interdisciplinary Systems Engineering
Civil Engineering: Fit for the Future
Proceedings of the Institution of Civil Engineers: Civil Engineering
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Si(100) Versus Ge(100): Watching the Interface Formation for the Growth of III-V-based Solar Cells on Abundant Substrates
