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Publications by Joel T. Asubar

Interface Trap States in Al2O3/AlGaN/GaN Structure Induced by Inductively Coupled Plasma Etching of AlGaN Surfaces

Physica Status Solidi (A) Applications and Materials Science

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Related publications

AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD and BCl3 Gate Recess Etching

ECS Transactions

English

Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures

Journal of Applied Physics

English

Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs

MRS Internet Journal of Nitride Semiconductor Research

English

Low-Damage Etching for AlGaN/GaN HEMTs Using Photo-Electrochemical Reactions

IEEE Transactions on Semiconductor Manufacturing

Electronic Engineering

Condensed Matter Physics

Manufacturing Engineering

Magnetic Materials

English

Sequential Tunneling Transport Characteristics of GaN/AlGaN Coupled-Quantum-Well Structures

Journal of Applied Physics

English

Characteristics of Inductively Coupled Cl2/BCl3 Plasmas During GaN Etching

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Condensed Matter Physics

English

Multiband GaN/AlGaN UV Photodetector

Acta Physica Polonica A

English

Hydrodynamic Modeling of AlGaN/GaN HEMTs

English

Trap Behaviours Characterization of AlGaN/GaN High Electron Mobility Transistors by Room-Temperature Transient Capacitance Measurement

English