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Publications by Jonathan T. Bessette
High Phosphorous Doped Germanium: Dopant Diffusion and Modeling
Journal of Applied Physics
Astronomy
Physics
A Germanium-On-Silicon Laser for On-Chip Applications
Related publications
Dopant-Vacancy Cluster Formation in Germanium
Journal of Applied Physics
Astronomy
Physics
Dopant Selection Strategy for High Quality Factor LSPR From Doped Metal Oxide Nanocrystals
Dopant Selection Strategy for High Quality Factor LSPR From Doped Metal Oxide Nanocrystals
Estimating the Dopant Distribution in Ca-Doped Α-SiAlON: Statistical HAADF-STEM Analysis and Large-Scale Atomic Modeling
Microscopy (Oxford, England)
Instrumentation
Nuclear Medicine
Radiology
Imaging
Structural Biology
Measurement and Modeling of Ultrafast Carrier Dynamics and Transport in Germanium/Silicon-Germanium Quantum Wells
Optics Express
Optics
Atomic
Molecular Physics,
Evidence of Magnetic Field Quenching of Phosphorous-Doped Silicon Quantum Dots
Current Applied Physics
Materials Science
Astronomy
Physics
Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and in Situ Dopant Activation
Journal of the Electrochemical Society
Surfaces
Condensed Matter Physics
Optical
Electrochemistry
Sustainability
Materials Chemistry
Magnetic Materials
Renewable Energy
Films
Coatings
Electronic
the Environment
Development of Neutron-Transmutation-Doped Germanium Bolometer Material
Nitrogen, Sulfur, Phosphorous Co-Doped Interconnected Porous Carbon Nanosheets With High Defect Density for Enhancing Supercapacitor and Lithium-Ion Battery Properties
ChemElectroChem
Catalysis
Electrochemistry
