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Publications by K. M. Horn

Surface Roughening of Ge(001) During 200 eV Xe Ion Bombardment and Ge Molecular Beam Epitaxy

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SurfacesFilmsInterfacesCondensed Matter PhysicsCoatings
1990English

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Ordered 2D Structure Formed Upon the Molecular Beam Epitaxy Growth of Ge on the Silicene/Ag(111) Surface

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Growth of Fe3Si/Ge/Fe3Si Trilayers on GaAs(001) Using Solid-Phase Epitaxy

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Antiphase Boundaries on Low-Energy-Ion Bombarded Ge(001)

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Surface Roughening During Low Temperature Si(100) Epitaxy

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1997English

Control of the Surface Superstructures on the Ge(001) Clean Surface

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2005English

Electronic Structure of Ge-Si Superlattices Grown on Ge (001)

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1991English

Phosphorus Incorporation During Si(001):P Gas-Source Molecular Beam Epitaxy: Effects on Growth Kinetics and Surface Morphology

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Air Stabilized (001)p‐type GaAs Fabricated by Molecular Beam Epitaxy With Reduced Surface State Density

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Adsorption of Te on Ge(001): Density-Functional Calculations

Physical Review B
2003English

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