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Publications by Kanehiro MACHIYA

GaAs Grown on GaP Substrate by Molecular Beam Epitaxy.

English

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InAs/GaAs Nanostructures Grown on Patterned Si(001) by Molecular Beam Epitaxy

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Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

Applied Physics Letters

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TEM Analysis of Tunnel-Junction Structures in FeCo Films on GaAs Grown by Molecular Beam Epitaxy

Microscopy and Microanalysis

Instrumentation

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Structural Properties of Bi2Te3 and Bi2Se3 Topological Insulators Grown by Molecular Beam Epitaxy on GaAs(001) Substrates

Applied Physics Letters

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Yellow–green Luminescence From Isoelectronic Nitrogen Centers in GaP Grown by Molecular‐beam Epitaxy

Journal of Applied Physics

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CdSe/ZnCdSe Quantum Dot Heterostructures for Yellow Spectral Range Grown on GaAs Substrates by Molecular Beam Epitaxy

Acta Physica Polonica A

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Behavior of Misfit Dislocations in GaAs Layers Grown on Si at Low Temperature by Molecular Beam Epitaxy

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Screw-Dislocation-Driven Growth Mode in Two Dimensional GaSe on GaAs(001) Substrates Grown by Molecular Beam Epitaxy

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Self-Catalyzed Core-Shell GaAs/GaNAs Nanowires Grown on Patterned Si (111) by Gas-Source Molecular Beam Epitaxy

Applied Physics Letters

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