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Publications by Karl D. Hobart
Room Temperature Operation of Epitaxially Grown Si/Si0.5Ge0.5/Si Resonant Interband Tunneling Diodes
Applied Physics Letters
Astronomy
Physics
Related publications
Radiation Tolerance of Si/Si0.6Ge0.4 Resonant Interband Tunneling Diodes
Journal of Applied Physics
Astronomy
Physics
High 5.2 Peak-To-Valley Current Ratio in Si/SiGe Resonant Interband Tunnel Diodes Grown by Chemical Vapor Deposition
Applied Physics Letters
Astronomy
Physics
Smoothening of (001) and (111) Cu Films Epitaxially Grown on Si Substrates
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Anisotropic FMR Linewidths in Epitaxially Grown Si-Doped A2-Fe Thin Films
Materials Transactions
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Breakdown Characteristics of MOVPE Grown Si-Doped GaAs Schottky Diodes
Solid-State Electronics
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Atomic Structures of Self-Assembled Epitaxially Grown GdSi2 Nanowires on Si(001) by STM
Scientific Reports
Multidisciplinary
Ge-On-Si Laser Operating at Room Temperature
Optics Letters
Optics
Atomic
Molecular Physics,
High Frequency Simulation of Resonant Tunneling Diodes
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Terahertz Oscillating InGaAs/AlAs Resonant Tunneling Diodes
