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Publications by Kazuhito Furuya
Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors With Buried Tungsten Wires
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Related publications
Nonlinearities in the Base Emitter Junction of Heterojunction Bipolar Transistors
In0.49Ga0.51P/GaAs Heterojunction Bipolar Transistors (HBTs) on 200 Mm Si Substrates: Effects of Base Thickness, Base and Sub-Collector Doping Concentrations
AIP Advances
Nanotechnology
Astronomy
Physics
Nanoscience
Bandgap Narrowing in Heavily Doped Base Regions of Si/Si1-xGex/Si Heterojunction Bipolar Transistors.
CCl4‐doped Semi‐insulating InP as a Buffer Layer in GaInAs/InP High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors
Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors With High Current Amplification (Adv. Electron. Mater. 3/2019)
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Reduced Turn-On Voltage for NPN Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment
Advances in Materials Science and Engineering
Materials Science
Engineering
GaAs Pseudo-Heterojunction Bipolar Transistor With a Heavily Carbon-Doped Base
4h-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding
ECS Solid State Letters
