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Publications by Kh. N. Juraev
Research of P-I-N Junctions Based on 4h-SiC Fabricated by Low-Temperature Diffusion of Boron
Advances in Materials Science and Engineering
Materials Science
Engineering
Spectral Dependence of Optical Absorption of 4h-SiC Doped With Boron and Aluminum
Journal of Spectroscopy
Optics
Analytical Chemistry
Atomic
Spectroscopy
Molecular Physics,
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Electronic Properties of Thin HfO2Films Fabricated by Atomic Layer Deposition on 4h-SiC
Acta Physica Polonica A
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Characterization of MOS Capacitors Fabricated on N-Type 4h-SiC Implanted With Nitrogen at High Dose
Materials Science Forum
4h-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding
ECS Solid State Letters
Deep Levels in Iron Doped N- And P-Type 4h-SiC
Journal of Applied Physics
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Thermoresistance of P -Type 4h-SiC Integrated MEMS Devices for High-Temperature Sensing
Advanced Engineering Materials
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Condensed Matter Physics
Metastable Defects in Low-Energy Electron Irradiated N-Type 4h-SiC
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Quantum Well Behavior of Single Stacking Fault 3C Inclusions in 4h-SiC P-I-N Diodes Studied by Ballistic Electron Emission Microscopy
Applied Physics Letters
Astronomy
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Microstructural Interpretation of Ni Ohmic Contact on N-Type 4H–SiC
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Temperature-Dependent Asymmetry of Anisotropic Magnetoresistance in Silicon P-N Junctions
Scientific Reports
Multidisciplinary
