Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Ki Gook Song
Fabrication and Characterization of Organic Thin-Film Transistors by Using Polymer Gate Electrode
Polymer (Korea)
Polymers
Materials Chemistry
Plastics
Chemical Engineering
Molecular Orientation and Optical Properties of Liquid Crystal Mixture Films of Photo-Reactive Mesogens and Non-Reactive Nematic Liquid Crystals
Polymer (Korea)
Polymers
Materials Chemistry
Plastics
Chemical Engineering
Related publications
Thin-Film Transistors: Top-Split-Gate Ambipolar Organic Thin-Film Transistors (Adv. Electron. Mater. 5/2018)
Advanced Electronic Materials
Optical
Electronic
Magnetic Materials
Effect of Illumination on Organic Polymer Thin-Film Transistors
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Source / Drain Contacts in Organic Polymer Thin Film Transistors
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
The Influence of Gate Dielectrics on a High-Mobility N-Type Conjugated Polymer in Organic Thin-Film Transistors
Applied Physics Letters
Astronomy
Physics
Micron-Scale Organic Thin Film Transistors With Conducting Polymer Electrodes Patterned by Polymer Inking and Stamping
Applied Physics Letters
Astronomy
Physics
Organic Thin-Film Transistors: Laser-Printed Organic Thin-Film Transistors (Adv. Mater. Technol. 11/2017)
Advanced Materials Technologies
Mechanics of Materials
Materials Science
Industrial
Manufacturing Engineering
Laser-Printed Organic Thin-Film Transistors
Advanced Materials Technologies
Mechanics of Materials
Materials Science
Industrial
Manufacturing Engineering
Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
High Performance ZnO Thin-Film Transistors Using High-Ҝ TiHfO Gate Dielectrics