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Publications by L. S. Robertson

Correlation of End-Of-Range Damage Evolution and Transient Enhanced Diffusion of Boron in Regrown Silicon

Applied Physics Letters
AstronomyPhysics
1999English

The Effect of Preamorphization Energy on Ultrashallow Junction Formation Following Ultrahigh-Temperature Annealing of Ion-Implanted Silicon

Journal of Applied Physics
AstronomyPhysics
2005English

Related publications

Transient Enhanced Diffusion After Laser Thermal Processing of Ion Implanted Silicon

Applied Physics Letters
AstronomyPhysics
1999English

Fundamental Modeling of Transient Enhanced Diffusion Through Extended Defect Evolution

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
1997English

Boron-Enhanced Diffusion of Boron From Ultralow-Energy Boron Implantation

1998English

Boron Diffusion in Silicon Oxides and Oxynitrides

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
1998English

Diffusion of Phosphorus and Boron From ALD Oxides Into Silicon

Physica Status Solidi (A) Applications and Materials Science
SurfacesElectronic EngineeringCondensed Matter PhysicsMaterials ChemistryOpticalElectricalMagnetic MaterialsFilmsCoatingsElectronicInterfaces
2019English

Influence of Radiation Damage on Xenon Diffusion in Silicon Carbide

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy PhysicsInstrumentationNuclear
2014English

Influence of Radiation Damage on Strontium and Iodine Diffusion in Silicon Carbide

Journal of Nuclear Materials
High Energy PhysicsMaterials ScienceEngineeringNuclear EnergyNuclear
2012English

Influence of Radiation Damage on Diffusion of Fission Products in Silicon Carbide

Physica Status Solidi (C) Current Topics in Solid State Physics
Condensed Matter Physics
2013English

Distributions of Boron and Phosphorus Implanted in Silicon in the Energy Range 0.1–1.5 MeV

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy PhysicsInstrumentationNuclear
1988English

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