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Publications by M Bescond
Performance Variability in Wrap-Round Gate Silicon Nano-Transistors: A 3D Self-Consistent NEGF Study of Ballistic Flows for Atomistically-Resolved Source and Drain
Journal of Physics: Conference Series
Astronomy
Physics
Related publications
Ballistic Transport in Gate-All-Around Nanowire Transistors
The International Conference on Electrical Engineering
Thin-Film Transistors in Polycrystalline Silicon by Blanket and Local Source/Drain Hydrogen Plasma-Seeded Crystallization
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Source / Drain Contacts in Organic Polymer Thin Film Transistors
Materials Research Society Symposium - Proceedings
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Double-Gate Fully-Depleted SOI Transistors for Low-Power High-Performance Nano-Scale Circuit Design
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
IEEE Transactions on Microwave Theory and Techniques
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A Self‐consistent Analysis of Temperature‐dependent Field‐effect Measurements in Hydrogenated Amorphous Silicon Thin‐film Transistors
Journal of Applied Physics
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Polycrystalline Silicon Thin-Film Transistor With Self-Aligned SiGe Raised Source/Drain
Applied Physics Letters
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Transport Spectroscopy of Coupled Donors in Silicon Nano-Transistors
Scientific Reports
Multidisciplinary
Electron Mobility in Double Gate Silicon on Insulator Transistors: Symmetric-Gate Versus Asymmetric-Gate Configuration
Journal of Applied Physics
Astronomy
Physics
