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Publications by M. C. M. van de Sanden

Absolute in Situ Measurement of Surface Dangling Bonds During A-Si:H Growth

Applied Physics Letters

English

Excellent Passivation of Highly Doped P-Type Si Surfaces by the Negative-Charge-Dielectric Al2O3

Applied Physics Letters

English

Absence of the Enhanced Intra-4f Transition Cross Section at 1.5μm of Er3+ in Si-Rich SiO2

Applied Physics Letters

English

Direct and Highly Sensitive Measurement of Defect-Related Absorption in Amorphous Silicon Thin Films by Cavity Ringdown Spectroscopy

Applied Physics Letters

English

Microcrystalline Silicon Solar Cells With an Open-Circuit Voltage Above 600mV

Applied Physics Letters

English

In Situ Reaction Mechanism Studies of Plasma-Assisted Atomic Layer Deposition of Al2O3

Applied Physics Letters

English

A Hard Graphitelike Hydrogenated Amorphous Carbon Grown at High Deposition Rate (>15nm∕s)

Applied Physics Letters

English

Surface-Diffusion-Controlled Incorporation of Nanosized Voids During Hydrogenated Amorphous Silicon Film Growth

Applied Physics Letters

English

Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition

Journal of the Electrochemical Society

Condensed Matter Physics

Electrochemistry

Materials Chemistry

Magnetic Materials

Renewable Energy

the Environment

English

Silicon Surface Passivation by Atomic Layer Deposited Al2O3

Journal of Applied Physics

English