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Publications by M. Hollfelder
Optimization of Modulation‐doped Ga1−xInxAs/InP Heterostructures Towards Extremely High Mobilities
Journal of Applied Physics
Astronomy
Physics
Related publications
Extremely High Room-Temperature Two-Dimensional Hole Gas Mobility in Ge/Si0.33Ge0.67/Si(001)p-Type Modulation-Doped Heterostructures
Applied Physics Letters
Astronomy
Physics
Electron Transport in Modulation-Doped InAlAs/InGaAs/InAlAs Heterostructures in High Electric Fields
Acta Physica Polonica A
Astronomy
Physics
Cracks in InP-based Heterostructures
Acta Crystallographica Section A Foundations of Crystallography
Structural Properties of Pt/P ‐InP Heterostructures
Applied Physics Letters
Astronomy
Physics
CCl4‐doped Semi‐insulating InP as a Buffer Layer in GaInAs/InP High Electron Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Low- And High-Field Transport Properties of Modulation-Doped Si/SiGe and Ge/SiGe Heterostructures: Effect of Phonon Confinement in Germanium Quantum Wells
Physical Review B
Graphene Embedded Modulator With Extremely Small Footprint and High Modulation Efficiency
Journal of Photonics
Optimization Problems of Nanoscale Semiconductor Heterostructures
Izvestiya Vysshikh Uchebnykh Zavedenii. Materialy Elektronnoi Tekhniki = Materials of Electronics Engineering
Photoacoustic Investigation of Doped InP Using Open Cell Configuration
Nondestructive Testing and Evaluation
Mechanics of Materials
Materials Science
Astronomy
Physics
Mechanical Engineering
