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Publications by M. J. Kappers
Luminescence of Eu3+ in GaN(Mg, Eu): Transitions From the 5D1 Level
Applied Physics Letters
Astronomy
Physics
Response to “Comment on ‘Three-Dimensional Atom Probe Studies of an InxGa1−xN∕GaN Multiple Quantum Well Structure: Assessment of Possible Indium Clustering’” [Appl. Phys. Lett. 91, 176101 (2007)]
Applied Physics Letters
Astronomy
Physics
Related publications
Effect of Si Codoping on Eu3+ Luminescence in GaN
Journal of Applied Physics
Astronomy
Physics
The Contribution of Eu3+ Doping Concentration on the Modulation of Morphology and Luminescence Properties of InVO4:Eu3+
RSC Advances
Chemistry
Chemical Engineering
Optically Active Centers in Eu Implanted, Eu in Situ Doped GaN, and Eu Doped GaN Quantum Dots
Journal of Applied Physics
Astronomy
Physics
Synthesis and Luminescence Properties of SrGd2O4:Eu3+ Red Phosphors
International Journal of Optics
Optics
Molecular Physics,
Optical
Atomic
Magnetic Materials
Electronic
Nature of Mg Impurities in GaN
Applied Physics Letters
Astronomy
Physics
La(OH)3:Eu3+and La2O3:Eu3+nanorod Bundles: Growth Mechanism and Luminescence Properties
CrystEngComm
Materials Science
Chemistry
Condensed Matter Physics
Spatially Resolved Micro-Luminescence From GaN/AlGaN Quantum Dots
Acta Physica Polonica A
Astronomy
Physics
Optical Excitation and External Photoluminescence Quantum Efficiency of Eu3+ in GaN
Scientific Reports
Multidisciplinary
Recombination Luminescence in Ca3-xCdxGa2Ge3O12 Garnets Doped With Eu3+ Ions
Acta Physica Polonica A
Astronomy
Physics
