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Publications by M. J. M. Gomes
Enhanced Resistive Switching Characteristics in Pt/BaTiO3/Ito Structures Through Insertion of HfO2:Al2O3 (HAO) Dielectric Thin Layer
Scientific Reports
Multidisciplinary
Gold Nanoparticles Embedded in Organic/Inorganic Hybrid Matrix: Electrical and Electrochemical Behavior (Withdrawal Notice)
Related publications
Excellent Resistive Switching Properties of Atomic Layer-Deposited Al2O3/HfO2/Al2O3 Trilayer Structures for Non-Volatile Memory Applications
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Resistive Switching Characteristics of HfO2 Thin Films on Mica Substrates Prepared by Sol-Gel Process
Nanomaterials
Materials Science
Chemical Engineering
Bipolar Resistive Switching Characteristics of Low Temperature Grown ZnO Thin Films by Plasma-Enhanced Atomic Layer Deposition
Applied Physics Letters
Astronomy
Physics
Interface Effect on Dielectric Constant of HfO2∕Al2O3 Nanolaminate Films Deposited by Plasma-Enhanced Atomic Layer Deposition
Applied Physics Letters
Astronomy
Physics
The Impact of Bending and Light Exposure on the Resistive Switching Characteristics of Transparent Flexible ITO/ZnO/ITO Resistive RAM (RRAM)
Evolution of Complementary Resistive Switching Characteristics Using IrOx/GdOx/Al2O3/TiN Structure
Applied Physics Letters
Astronomy
Physics
Bi-Stable Resistive Switching Characteristics in Ti-Doped ZnO Thin Films
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
Model of HfO2/Al2O3 Dielectric ALNINNAlganmos HEMT for Power Application
International Journal of Innovative Technology and Exploring Engineering
Mechanics of Materials
Electronic Engineering
Civil
Structural Engineering
Electrical
Computer Science
A Forming-Free Bipolar Resistive Switching Behavior Based on ITO/V2O5/ITO Structure
Applied Physics Letters
Astronomy
Physics
