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Publications by M. Kasap
The Effect of Strain Relaxation on Electron Transport in Undoped Al0.25Ga0.75N/GaN Heterostructures
Physica B: Condensed Matter
Electronic Engineering
Condensed Matter Physics
Optical
Electrical
Magnetic Materials
Electronic
Related publications
Electron Transport Properties in Al0.25Ga0.75N/AlN/GaN Heterostructures With Different InGaN Back Barrier Layers and GaN Channel Thicknesses Grown by MOCVD
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Films
Coatings
Electronic
Interfaces
Residual Strain Effects on the Two-Dimensional Electron Gas Concentration of AlGaN/GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates
Applied Physics Letters
Astronomy
Physics
Electroreflectance Characterization of AlInGaN/GaN High-Electron Mobility Heterostructures
Semiconductor Science and Technology
Electronic Engineering
Condensed Matter Physics
Optical
Materials Chemistry
Electrical
Magnetic Materials
Electronic
Effect of GaN Cap Layer Grown at a Low Temperature on Electrical Characteristics of Al0.25Ga0.75N∕GaN Heterojunction Field-Effect Transistors
Applied Physics Letters
Astronomy
Physics
Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
Measurements of GaN-Based Heterostructures With Electron Beam Induced Current
Microscopy and Microanalysis
Instrumentation
Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures
Journal of Applied Physics
Astronomy
Physics
The Size-Quantized Oscillations of the Optical-Phonon-Limited Electron Mobility in AlN/GaN/AlN Nanoscale Heterostructures
Journal of Physics: Conference Series
Astronomy
Physics
