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Publications by M. Leszczyński
Crystallographic Properties of Bulk GaN Crystals Grown at High Pressure
Acta Physica Polonica A
Astronomy
Physics
High Resistivity GaN Single Crystalline Substrates
Acta Physica Polonica A
Astronomy
Physics
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Mechanical Properties of C60 Bulk Materials Synthesized at High Pressure.
Review of High Pressure Science and Technology/Koatsuryoku No Kagaku To Gijutsu
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High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process
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Blue Lasers on High Pressure Grown GaN Single Crystal Substrates
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Characterization of 2.5-Inch Diameter Bulk GaN Grown From Melt-Solution
physica status solidi (a)
Growth and Characterization of Gan Bulk Crystals via Vapor Phase Transport
Materials Research Society Symposium - Proceedings
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Experimental Characterization of Impact Ionization Coefficients for Electrons and Holes in GaN Grown on Bulk GaN Substrates
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Pressure Sensors: Bulk Semiconductors, Needle-Like Crystals, Nanotubes
Sensor Electronics and Microsystem Technologies
