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Publications by M. Plissonier
AlGaN/GaN MIS-HEMT Gate Structure Improvement Using Al2O3 Deposited by PEALD and BCl3 Gate Recess Etching
ECS Transactions
Engineering
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Interface Trap States in Al2O3/AlGaN/GaN Structure Induced by Inductively Coupled Plasma Etching of AlGaN Surfaces
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