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Publications by Maria Merlyne De Souza
Modelling the Threshold Voltage for P-Channel E-Mode GaN HFETs
IET Power Electronics
Electronic Engineering
Electrical
Investigation of the Effect of Weak Non-Linearities on P1dB and Efficiency of Class B/J/J* Amplifier
IEEE Transactions on Circuits and Systems II: Express Briefs
Electronic Engineering
Electrical
Related publications
Silicon Dioxide-Encapsulated High-Voltage AlGaN/GaN HFETs for Power-Switching Applications
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Effects of P-GaN Capping Layer on the Current Collapse Behaviors in Normally-Off P-GaN Gate AlGaN/GaN HFETs
Enhancement-Mode Metal–insulator–semiconductor GaN/AlInN/GaN Heterostructure Field-Effect Transistors on Si With a Threshold Voltage of +3.0 v and Blocking Voltage Above 1000 V
Applied Physics Express
Engineering
Astronomy
Physics
Compact Threshold-Voltage Model for Short-Channel Partially-Depleted (PD) SOI Dynamic-Threshold MOS (DTMOS) Devices
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Normally-Off AlGaN/GaN MIS-HFETs Using Non-Polar A-Plane
Accumulated Body Ultranarrow Channel Silicon Transistor With Extreme Threshold Voltage Tunability
Applied Physics Letters
Astronomy
Physics
Current-Transport Mechanisms in the AlInN/AlN/GaN Single-Channel and AlInN/AlN/GaN/AlN/GaN Double-Channel Heterostructures
Thin Solid Films
Surfaces
Alloys
Optical
Interfaces
Metals
Materials Chemistry
Magnetic Materials
Films
Coatings
Electronic
Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy
