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Publications by Marie-Anne Jaud

Study of Deep Traps in AlGaN/GaN High-Electron Mobility Transistors by Electrical Characterization and Simulation

Journal of Applied Physics

English

Related publications

Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon

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Simulation Study on Electrical Characteristic of AlGaN/GaN High Electron Mobility Transistors With AlN Spacer Layer

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Fast Electrical Detection of Hg(II) Ions With AlGaN∕GaN High Electron Mobility Transistors

Applied Physics Letters

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Trap Behaviours Characterization of AlGaN/GaN High Electron Mobility Transistors by Room-Temperature Transient Capacitance Measurement

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Study of Gate Oxide Traps in HfO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors by Use of Ac Transconductance Method

Applied Physics Letters

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Prostate Specific Antigen Detection Using AlGaN∕GaN High Electron Mobility Transistors

Applied Physics Letters

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Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors

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Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

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Linearity Characteristics of Field-Plated AlGaN/GaN High Electron Mobility Transistors for Microwave Applications

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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