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Publications by Marina Baryshnikova

Nano-Ridge Engineering of GaSb for the Integration of InAs/GaSb Heterostructures on 300 Mm (001) Si

Crystals
Materials ScienceInorganic ChemistryChemical EngineeringCondensed Matter Physics
2020English

Related publications

Epitaxial Growth of GaSb and InAs Fins on 300 Mm Si (001) by Aspect Ratio Trapping

Journal of Applied Physics
AstronomyPhysics
2016English

Scaling of Vertical InAs–GaSb Nanowire Tunneling Field-Effect Transistors on Si

IEEE Electron Device Letters
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2016English

Characterization of Carriers in GaSb∕InAs Superlattice Grown on Conductive GaSb Substrate

Applied Physics Letters
AstronomyPhysics
2008English

In situRaman Spectroscopy of the Selective Etching of Antimonides in GaSb/AlSb/InAs Heterostructures

Semiconductor Science and Technology
Electronic EngineeringCondensed Matter PhysicsOpticalMaterials ChemistryElectricalMagnetic MaterialsElectronic
1998English

InAs/GaSb Type-Ii Superlattice Detectors

Advances in Electronics
2014English

N-Structure Based on InAs/AlSb/GaSb Superlattice Photodetectors

Superlattices and Microstructures
Electronic EngineeringElectricalCondensed Matter PhysicsMaterials Science
2015English

Evolution of GaSb Epitaxy on GaAs(001)‐c(4×4)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
SurfacesFilmsInterfacesCondensed Matter PhysicsCoatings
1996English

Localized In-Gap States and Quantum Spin Hall Effect in Si-Doped InAs/GaSb Quantum Wells

Physical Review B
2014English

Evolution of Morphology and Microstructure of GaAs/GaSb Nanowire Heterostructures

Nanoscale Research Letters
Materials ScienceNanotechnologyCondensed Matter PhysicsNanoscience
2015English

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