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Publications by Marko Karlušić
Raman Mapping of 4‐MeV C and Si Channeling Implantation of 6H‐SiC
Journal of Raman Spectroscopy
Materials Science
Spectroscopy
Related publications
Microscopic Raman Mapping of Epitaxial Graphene on 4h-SiC(0001)
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Improved Annealing Process for 6h-SiC P+-N Junction Creation by Al Implantation
Materials Science Forum
The Channeling Effect of Al and N Ion Implantation in 4H–SiC During JFET Integrated Device Processing
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
High Energy Physics
Instrumentation
Nuclear
SEM Observation and Raman Analysis on 6H–SiC Wafer Damage Irradiated by Nanosecond Pulsed Nd:YAG Laser
Chinese Optics Letters
Electronic Engineering
Optics
Molecular Physics,
Optical
Electrical
Atomic
Magnetic Materials
Electronic
Microwave Annealing of Ion Implanted 6h-SiC
Materials Research Society Symposium - Proceedings
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Si, Be, and C Ion Implantation in GaAs0.93P0.07
Journal of Applied Physics
Astronomy
Physics
HVPE of Scandium Nitride on 6H–SiC(0001)
Journal of Crystal Growth
Inorganic Chemistry
Materials Chemistry
Condensed Matter Physics
Simulation of Quality of SiC/Si Interface During MBE Deposition of C on Si
Materialwissenschaft und Werkstofftechnik
Mechanics of Materials
Materials Science
Condensed Matter Physics
Mechanical Engineering
Review of Pendeo-Epitaxial Growth and Characterization of Thin Films of GaN and AlGaN Alloys on 6h-SiC(0001) and Si(111) Substrates
MRS Internet Journal of Nitride Semiconductor Research
