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Publications by Martin Vielemeyer

Nucleation and Growth of GaN Nanorods on Si (111) Surfaces by Plasma-Assisted Molecular Beam Epitaxy - The Influence of Si- And Mg-Doping

Journal of Applied Physics

English

Related publications

Polycrystalline to Single-Crystalline InN Grown on Si(111) Substrates by Plasma-Assisted Molecular-Beam Epitaxy

Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

English

Photoluminescence Measurements for GaAs Grown on Si(100) and Si(111) by Molecular Beam Epitaxy

Applied Physics Letters

English

Growth of GaN on Si(111): Surfaces and Crystallinity of the Epifilms and the Transport Behavior of GaN/Si Heterojunctions

Journal of Applied Physics

English

Properties of GaN Nanocolumns Grown by Plasma - Assisted MBE on Si (111) Substrates

Acta Physica Polonica A

English

Carbon Doping of GaN With CBr4 in Radio-Frequency Plasma-Assisted Molecular Beam Epitaxy

Journal of Applied Physics

English

Characterization of GaN Microstructures Grown by Plasma-Assisted Molecular Beam Epitaxy

English

Accommodation Mechanism of InN Nanocolumns Grown on Si(111) Substrates by Molecular Beam Epitaxy

Applied Physics Letters

English

The Influence of Sn Doping on the Growth of In2O3 on Y-Stabilized ZrO2(100) by Oxygen Plasma Assisted Molecular Beam Epitaxy

Journal of Applied Physics

English

Epitaxial Growth of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction Structures on CaF2/Si(111) by Molecular Beam Epitaxy

Thin Solid Films

Materials Chemistry

Magnetic Materials

English