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Publications by Masaki Yoshimaru
The Observation of “Conduction Spot” on NiO Resistance Random Access Memory
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
The Observation of “Conduction Spot” on NiO Resistance Random Access Memory
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Related publications
Comparative Structural and Electrical Analysis of NiO and Ti Doped NiO as Materials for Resistance Random Access Memory
Journal of Applied Physics
Astronomy
Physics
Comprehensive Examination on Resistive Random Access Memory
International Journal of Recent Technology and Engineering
Engineering
Management of Technology
Innovation
Mechanistic Analysis of Oxygen Vacancy-Driven Conductive Filament Formation in Resistive Random Access Memory Metal/NiO/Metal Structures
Molecular Random-Access Memory Cell Demonstrated
MRS Bulletin
Materials Science
Theoretical Chemistry
Condensed Matter Physics
Physical
Significance of Residual Artifacts From Random Access Memory
International Journal of Science and Research (IJSR)
A Thought-Operated Digital Random-Access Memory
Computational Intelligence and Neuroscience
Medicine
Mathematics
Computer Science
Neuroscience
Benchmarking Analogue Performance of Emerging Random Access Memory Technologies
A 64K Dynamic Random Access Memory Feasibility Study.
