Amanote Research
Register
Sign In
Discover open access scientific publications
Search, annotate, share and cite publications
Publications by Masao TABUCHI
Nitride Semiconductor Surfaces. Characterization of Initial Growth Stage of GaInN Multilayered Structure by X-Ray CTR Scattering and X-Ray Reflectivity Method.
Hyomen Kagaku
Related publications
X-Ray CTR Scattering Measurements Using Conventional X-Ray Source to Study Semiconductor Hetero-Interfaces
Transactions of the Materials Research Society of Japan
Buried Heterostructure of Nitride Semiconductors Revealed by Laboratory Level X-Ray CTR Scattering
Transactions of the Materials Research Society of Japan
Improvement of X-Ray Reflectivity Calculations on a Multilayered Surface
Powder Diffraction
Instrumentation
Radiation
Condensed Matter Physics
Materials Science
X-Ray Metrology by Diffraction and Reflectivity
AIP Conference Proceedings
Astronomy
Physics
Melting Behavior of Substrate-Free Polystyrene Surfaces Studied by X-Ray Reflectivity
Acta Crystallographica Section A Foundations of Crystallography
Dense Matter Characterization by X-Ray Thomson Scattering
Journal of Quantitative Spectroscopy and Radiative Transfer
Radiation
Optics
Atomic
Spectroscopy
Molecular Physics,
Evaluation of Joined Silicon Nitride by X-Ray Computed Tomography (X-Ray CT)
Journal of the Ceramic Society of Japan
Materials Chemistry
Chemistry
Condensed Matter Physics
Composites
Ceramics
Local Structure Analysis by X-Ray Raman Scattering.
Nihon Kessho Gakkaishi
X-Ray Reflectivity Method for the Characterization of InGaN/GaN Quantum Well Interface
Physica Status Solidi (B): Basic Research
Optical
Electronic
Condensed Matter Physics
Magnetic Materials
