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Publications by Masato Noborio
Enhanced Drain Current of 4h-SiC MOSFETs by Adopting a Three-Dimensional Gate Structure
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
Related publications
Threshold-Voltage Instability in 4h-SiC MOSFETs With Nitrided Gate Oxide Revealed by Non-Relaxation Method
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Investigation of Gate-Induced Drain Leakage (GIDL) Current in Thin Body Devices: Single-Gate Ultra-Thin Body, Symmetrical Double-Gate, and Asymmetrical Double-Gate MOSFETs
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Low Power Current-Mode Threshold Logic Gate Using Nano-Technology Double-Gate MOSFETs
The International Conference on Electrical Engineering
500$^{\circ}{\rm C}$ Bipolar Integrated OR/NOR Gate in 4h-SiC
IEEE Electron Device Letters
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
A Two-Dimensional Analytical Model of Fully Depleted Asymmetrical Dual Material Gate Double-Gate Strained-Si MOSFETs
Journal of Semiconductors
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
Magnetic Materials
Electronic
Model and Analysis of Gate Leakage Current in Ultrathin Nitrided Oxide MOSFETs
IEEE Transactions on Electron Devices
Electronic Engineering
Optical
Electrical
Magnetic Materials
Electronic
A Method of Junction Temperature Estimation for SiC Power MOSFETs via Turn-On Saturation Current Measurement
IEEJ Journal of Industry Applications
Electronic Engineering
Industrial
Mechanical Engineering
Energy Engineering
Automotive Engineering
Manufacturing Engineering
Electrical
Power Technology
The Effects of Nitridation and Re-Oxidation on Drain Leakage Current in N-Channel MOSFETs
Cryogenic Characterization of Commercial SiC Power MOSFETs
Materials Science Forum
