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Publications by Mayank T. Bulsara

Materials Properties and Dislocation Dynamics in InAsP Compositionally Graded Buffers on InP Substrates

Journal of Applied Physics

English

High Mobility In0.53Ga0.47As Quantum-Well Metal Oxide Semiconductor Field Effect Transistor Structures

Journal of Applied Physics

English

Related publications

Carrier Compensation and Scattering Mechanisms in Si-Doped InAsyP1−y Layers Grown on InP Substrates Using Intermediate InAsyP1−y Step-Graded Buffers

Journal of Applied Physics

English

Unexpected Crystal and Domain Structures and Properties in Compositionally Graded PbZr1-xTixO3Thin Films

Advanced Materials

Mechanics of Materials

Materials Science

Mechanical Engineering

English

Room-Temperature InP/InAsP Quantum Discs-In-Nanowire Infrared Photodetectors

Materials Science

Condensed Matter Physics

Mechanical Engineering

English

Defect Formation During Chlorine-Based Dry Etching and Their Effects on the Electronic and Structural Properties of InP/InAsP Quantum Wells

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Condensed Matter Physics

English

Когерентный Рост Нитевидных Нанокристаллов InP/InAsP/InP На Поверхности Si(111) При Молекулярно-Пучковой Эпитаксии

Журнал технической физики

English

InP Materials.

English

Electron Transport in Gated InGaAs and InAsP Quantum Well Wires in Selectively Grown InP Ridge Structures

Physica E: Low-Dimensional Systems and Nanostructures

Condensed Matter Physics

Molecular Physics,

Magnetic Materials

English

Improved Pyroelectric Figures of Merit in Compositionally Graded PbZr1–xTixO3Thin Films

ACS Applied Materials & Interfaces

Materials Science

English

A Micropolar Model for Elastic Properties in Functionally Graded Materials

Advances in Mechanical Engineering

Mechanical Engineering

English