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Publications by Michael Curtis Meyer Masuda
Investigation of Degradation Effects Due to Gate Stress in GaN-on-Si High Electron Mobility Transistors Through Analysis of Low Frequency Noise
Related publications
Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
Applied Physics Letters
Astronomy
Physics
Ultrascaled InAlN/GaN High Electron Mobility Transistors With Cutoff Frequency of 400 GHz
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
Astronomy
Physics
Studies of Traps in AlGaN/GaN High Electron Mobility Transistors on Silicon
On the Link Between Electroluminescence, Gate Current Leakage, and Surface Defects in AlGaN/GaN High Electron Mobility Transistors Upon Off-State Stress
Applied Physics Letters
Astronomy
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Degradation of Dc Characteristics of InAlN/GaN High Electron Mobility Transistors by 5 MeV Proton Irradiation
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Surfaces
Electronic Engineering
Condensed Matter Physics
Instrumentation
Electronic
Optical
Materials Chemistry
Electrical
Magnetic Materials
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Process Chemistry
Coatings
Technology
Dual Barrier InAlN/AlGaN/GaN-on-silicon High-Electron-Mobility Transistors With Pt- And Ni-Based Gate Stacks
Physica Status Solidi (A) Applications and Materials Science
Surfaces
Electronic Engineering
Condensed Matter Physics
Materials Chemistry
Optical
Electrical
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Monte Carlo Analysis of Impact Ionization in Isolated-Gate InAs/AlSb High Electron Mobility Transistors
Acta Physica Polonica A
Astronomy
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InAs-Channel High-Electron-Mobility Transistors for Ultralow-Power Low Noise Amplifier Applications
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
Engineering
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Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal–Oxide–Semiconductor High-Electron-Mobility Transistors
Nanoscale Research Letters
Materials Science
Nanotechnology
Condensed Matter Physics
Nanoscience
