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Publications by Michael D. Craven
Polarity Determination of A-Plane GaN on R-Plane Sapphire and Its Effects on Lateral Overgrowth and Heteroepitaxy
Journal of Applied Physics
Astronomy
Physics
Related publications
Electronic States of Deep Trap Levels in A-Plane GaN Templates Grown on R-Plane Sapphire by HVPE
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P- And N-Type Doping of Non-Polar A-Plane GaN Grown by Molecular-Beam Epitaxy on R-Plane Sapphire
MRS Internet Journal of Nitride Semiconductor Research
MOCVD Growth and Optical Properties of Non-Polar (11–20) A-Plane GaN on (10–12) R-Plane Sapphire Substrate
Journal of Crystal Growth
Inorganic Chemistry
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Epitaxial Lateral Overgrowth of A-Plane GaN by Metalorganic Chemical Vapor Deposition
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Morphology, Polarity, and Lateral Molecular Beam Epitaxy Growth of GaN on Sapphire
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Defect Reduction in (11-20) A-Plane GaN by Two-Step Epitaxial Lateral Overgrowth
Materials Research Society Symposium - Proceedings
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Overgrowth and Strain Investigation of (11–20) Non-Polar GaN on Patterned Templates on Sapphire
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Mechanism of Horizontally Aligned Growth of Single-Wall Carbon Nanotubes on R-Plane Sapphire
Particular Electrical Quality Ofa-Plane GaN Films Grown Onr-Plane Sapphire by Metal-Organic Chemical Vapor Deposition
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