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Publications by Michael J. Aziz

On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon

Applied Physics Letters
AstronomyPhysics
2009English

Activation Volume for Phosphorus Diffusion in Silicon and Si0.93Ge0.07

Applied Physics Letters
AstronomyPhysics
2005English

Three-Dimensional Morphology Evolution of SiO2 Patterned Films Under MeV Ion Irradiation

Journal of Applied Physics
AstronomyPhysics
2006English

Pressure‐enhanced Crystallization Kinetics of Amorphous Si and Ge: Implications for Point‐defect Mechanisms

Journal of Applied Physics
AstronomyPhysics
1991English

Interfacial Roughening During Solid Phase Epitaxy: Interaction of Dopant, Stress, and Anisotropy Effects

Journal of Applied Physics
AstronomyPhysics
2004English

The Activation Strain Tensor: Nonhydrostatic Stress Effects on Crystal-Growth Kinetics

Physical Review B
1991English

Formation of Single Crystal Sulfur Supersaturated Silicon Based Junctions by Pulsed Laser Melting

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
2007English

Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2002English

Spontaneous Pattern Formation From Focused and Unfocused Ion Beam Irradiation

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2001English

Model for Dopant and Impurity Segregation During Vapor Phase Growth

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2000English

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