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Publications by Mikhail Sergeеvich Afanas’ev
Voltage-Capacitance Characteristics of MIS-structures Based on Ferroelectric Films
Izvestiya of Saratov University. New series. Series: Physics
Calculation of Thermal Parameters and Technology of Formation MPL Microwave Range
Izvestiya of Saratov University. New series. Series: Physics
Related publications
Quantitative Characteristics of Traps in AlGaN/GaN MIS-HEMT via Transient Capacitance Measurement
Turnaround of Hysterisis for Capacitance–voltage Characteristics of Hafnium Oxynitride Dielectrics
Applied Physics Letters
Astronomy
Physics
Bi4Ti3O12 Ferroelectric Thin Films: Morphology and Electrical Characteristics
Journal de Physique III
Negative Capacitance Beyond Ferroelectric Switches
Thickness Dependence of Intrinsic Dielectric Response and Apparent Interfacial Capacitance in Ferroelectric Thin Films
Journal of Applied Physics
Astronomy
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Phase-Field Model of Domain Structures in Ferroelectric Thin Films
Applied Physics Letters
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Summary Abstract: Capacitance–voltage Characteristics in Modulation Doped Heterojunction FETs
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
Voltage Dependence of Supercapacitor Capacitance
Metrology and Measurement Systems
Fabrication of SiO2/Ge MIS Structures by Plasma Oxidation of Ultrathin Si Films Grown on Ge
