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Publications by Miko Matsumoto
Observation of Dopant Concentration in GaN Semiconductor by High Sensitivity Electron Holography
Materia Japan
Molecular Motion and High-Temperature Paramagnetic Phase Inκ−(BEDT-TTF)2Cu[N(CN)2]Cl
Physical Review B
Related publications
Mapping of Process Induced Dopant Redistributions by Electron Holography
Microscopy and Microanalysis
Instrumentation
Issues Affecting Quantitative Evaluation of Dopant Profiles Using Electron Holography
Microscopy and Microanalysis
Instrumentation
Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors
Low Voltage Electron Holography - High Voltage Electron Holography
Microscopy and Microanalysis
Instrumentation
Electric Potential Distributions of Two-Dimensional Electron Gas Layers at GaN/AlGaN Nano-Interfaces Observed by High Precision Phase-Shifting Electron Holography
Materia Japan
Problems Concerning Application of Electron-Holography Observation of P-N Junctions From the Viewpoint of the Semiconductor Industry
Microscopy and Microanalysis
Instrumentation
Direct Observation of Dopant Atom Diffusion in a Bulk Semiconductor Crystal Enhanced by a Large Size Mismatch
Physical Review Letters
Astronomy
Physics
Observation of in Concentration Variations in InGaN∕GaN Quantum-Well Heterostructures by Scanning Capacitance Microscopy
Applied Physics Letters
Astronomy
Physics
Counting Tm Dopant Atoms in and Around GaN Dots Using Scannning Transmission Electron Microscopy
Microscopy and Microanalysis
Instrumentation
