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Publications by Ming-Jinn Tsai

Polarity Reversion of the Operation Mode of HfO2-Based Resistive Random Access Memory Devices by Inserting Hf Metal Layer

Journal of Nanoscience and Nanotechnology
Materials ScienceCondensed Matter PhysicsNanoscienceBioengineeringNanotechnologyChemistryBiomedical Engineering
2013English

Wide Operation Margin of Toggle Mode Switching for Magnetic Random Access Memory With Preceding Negative Pulse Writing Scheme

Applied Physics Letters
AstronomyPhysics
2006English

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