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Publications by Mutsumi KIMURA

Temperature Sensor Employing Ring Oscillator Composed of Poly-Si Thin-Film Transistors: Comparison Between Lightly-Doped and Offset Drain Structures

IEICE Transactions on Electronics
Electronic EngineeringOpticalElectricalMagnetic MaterialsElectronic
2014English

New Developments Opening Up the Future of Fiber Science New Developments of Functional Fiber

Sen'i Kikai Gakkaishi (Journal of the Textile Machinery Society of Japan)
1999English

Related publications

Double-Gate Two-Step Source/Drain Poly-Si Thin-Film Transistor

Coatings
SurfacesFilmsCoatingsMaterials ChemistryInterfaces
2019English

Poly-Si Thin-Film Transistors Crystallized by Electron-Beam Annealing

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2002English

Combined Negative Bias Temperature Instability and Hot Carrier Stress Effects in Low Temperature Poly-Si Thin Film Transistors

2006English

Operations of Poly-Si Nanowire Thin-Film Transistors With a Multiple-Gated Configuration

Nanotechnology
Mechanics of MaterialsElectronic EngineeringMechanical EngineeringMaterials ScienceNanoscienceElectricalBioengineeringNanotechnologyChemistry
2007English

Source / Drain Contacts in Organic Polymer Thin Film Transistors

Materials Research Society Symposium - Proceedings
Mechanics of MaterialsMaterials ScienceCondensed Matter PhysicsMechanical Engineering
2003English

Modeling of Drain Current Mismatch in Organic Thin-Film Transistors

IEEE/OSA Journal of Display Technology
Electronic EngineeringCondensed Matter PhysicsOpticalElectricalMagnetic MaterialsElectronic
2015English

Spatially and Temporally Resolving the Degradation of N-Channel Poly-Si Thin-Film Transistors Under Hot-Carrier Stressing

Journal of Applied Physics
AstronomyPhysics
2007English

C60 Thin Film Transistors

Applied Physics Letters
AstronomyPhysics
1995English

The Characteristics of N- And P-Channel Poly-Si Thin-Film Transistors With Fully Ni-Salicided S/D and Gate Structure

Journal of the Electrochemical Society
SurfacesCondensed Matter PhysicsOpticalElectrochemistrySustainabilityMaterials ChemistryMagnetic MaterialsRenewable EnergyFilmsCoatingsElectronicthe Environment
2010English

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