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Publications by Naohisa INOUE

The Effect of Stress Due to Impurity on Point Defect Generation in Silicon Crystal.

English

Semiconductor Ultrathin Films and Quantum Wells.

Journal of the Surface Finishing Society of Japan

English

Temperature Gradient and Heat Balance at the Solid-Liquid Interface in CZ Silicon Growth.

English

Analysis of Mechanism of Infrared Absorption Caused by Nitrogen in Silicon

English

Related publications

On the Temperature Dependence of Point-Defect-Mediated Luminescence in Silicon

Applied Physics Letters

English

Molecular Dynamics Analysis for Effect of Defect Size on Fracture Behavior of Single Crystal Silicon

Transactions of the Japan Society of Mechanical Engineers Series A

English

Effect of Growth Polarity on Vacancy Defect and Impurity Incorporation in Dislocation-Free GaN

Applied Physics Letters

English

Effect of Magnetic Field on the Reconstruction of the Defect-Impurity State and Сathodoluminescence in Si/SiO2 Structure

Semiconductor Physics, Quantum Electronics and Optoelectronics

Electronic Engineering

Molecular Physics,

Magnetic Materials

English

Defect and Strain in Hydrogen and Helium Coimplanted Single-Crystal Silicon

Journal of Physics D: Applied Physics

Condensed Matter Physics

Magnetic Materials

English

On the Generation of Roll Vortices Due to the Inflection Point Instability of the Hurricane Boundary Layer Flow

Journals of the Atmospheric Sciences

Atmospheric Science

English

On the Ab Initio Calculation of Vibrational Formation Entropy of Point Defect: The Case of the Silicon Vacancy

EPJ Photovoltaics

Electronic Engineering

Condensed Matter Physics

Renewable Energy

Magnetic Materials

the Environment

English

Nitrogen-Impurity–native-Defect Complexes in ZnSe

Physical Review B

English

Effect of Crystal Plane Orientation on Tribochemical Removal of Monocrystalline Silicon

Scientific Reports

Multidisciplinary

English