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Publications by Naoki Kobayashi

Extrinsic Base Regrowth of P-InGaN for NPN-Type GaN/InGaN Heterojunction Bipolar Transistor

English

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InGaP/InGaAsN/GaAs NpN Double-Heterojunction Bipolar Transistor

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Optimization of P-GaN/InGaN/N-GaN Double Heterojunction P-I-N Solar Cell for High Efficiency: Simulation Approach

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Reduced Turn-On Voltage for NPN Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment

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Investigation of P-Type Depletion Doping for InGaN/GaN-based Light-Emitting Diodes

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Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs

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Electroluminescence Emission From Light-Emitting Diode of P-ZnO/(InGaN/GaN) Multiquantum Well/N-GaN

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Semipolar {Nn¯01} InGaN/GaN Ridge Quantum Wells (N = 1−3) Fabricated by a Regrowth Technique

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GaAs Pseudo-Heterojunction Bipolar Transistor With a Heavily Carbon-Doped Base

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Characteristics of GaN/InGaN Double-Heterostructure Photovoltaic Cells

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