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Publications by Nobuyuki Hayama
Low Resistance Contact and K-Band High Power Performance for AlGaN/GaN HJFETs
IEEJ Transactions on Electronics, Information and Systems
Electronic Engineering
Electrical
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Polarization Effects in AlGaN/GaN and GaN/AlGaN/GaN Heterostructures
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Design of High Power S-Band GaN MMIC Power Amplifiers for WiMAX Applications
COMPUTER AIDED DESIGN (CAD) OF THE AlGaN/GaN FET X-Band LOW-NOISE AMPLIFIERS
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A Drain-Lag Model for AlGaN/GaN Power HEMTs
IEEE MTT-S International Microwave Symposium Digest
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Excess Low-Frequency Noise in AlGaN/GaN-based High-Electron-Mobility Transistors
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43W, 52% PAE X-Band AlGaN/GaN HEMTs MMIC Amplifiers
Base Transit Time in Abrupt GaN/InGaN/GaN and AlGaN/GaN/AlGaN HBTs
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Thermal Boundary Resistance and Heat Diffusion in AlGaN/GaN HFETs
Materials Research Society Symposium - Proceedings
Mechanics of Materials
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