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Publications by Nobuyuki Ikarashi

Author Correction: Gate Tuning of Synaptic Functions Based on Oxygen Vacancy Distribution Control in Four-Terminal TiO2−x Memristive Devices

Scientific Reports

Multidisciplinary

English

New Scopes in Researches on Microstructures for Development of Materials Through Electron Microscopy (2)

English

Related publications

Effect of Voltage Polarity and Amplitude on Electroforming of TiO2 Based Memristive Devices

Materials Science

English

Nanoparticle Dynamics in Oxide‐Based Memristive Devices

Physica Status Solidi (A) Applications and Materials Science

Electronic Engineering

Condensed Matter Physics

Materials Chemistry

Magnetic Materials

English

Selective Activation of Memristive Interfaces in TaOx-based Devices by Controlling Oxygen Vacancies Dynamics at the Nanoscale

Mechanics of Materials

Electronic Engineering

Mechanical Engineering

Materials Science

English

Unconventional Inorganic-Based Memristive Devices for Advanced Intelligent Systems

Advanced Materials Technologies

Mechanics of Materials

Materials Science

Manufacturing Engineering

English

Recent Progress in Synaptic Devices Based on Two‐Dimensional Materials

Advanced Intelligent Systems

English

Author Correction: Electrical Conductivity Distribution in Detonating Benzotrifuroxane

Scientific Reports

Multidisciplinary

English

High Switching Endurance in TaOx Memristive Devices

Applied Physics Letters

English

Author Correction: Attosecond Coherent Control of Free-Electron Wave Functions Using Semi-Infinite Light Fields

Nature Communications

Molecular Biology

English

Distribution of Alloying Quadrivalent Zirconium in TiO2−x Magnèli Phase

Materials Transactions

Mechanics of Materials

Materials Science

Condensed Matter Physics

Mechanical Engineering

English