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Publications by Oliver Woywode
Nonlinearities in the Base Emitter Junction of Heterojunction Bipolar Transistors
Related publications
Bandgap Narrowing in Heavily Doped Base Regions of Si/Si1-xGex/Si Heterojunction Bipolar Transistors.
Reduction of Base-Collector Capacitance in Submicron InP/GaInAs Heterojunction Bipolar Transistors With Buried Tungsten Wires
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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Large Signal Characterization and Modeling of Heterojunction Bipolar Transistors
Reduced Turn-On Voltage for NPN Graded-Base AlGaN/GaN Heterojunction Bipolar Transistors by Thermal Treatment
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In0.49Ga0.51P/GaAs Heterojunction Bipolar Transistors (HBTs) on 200 Mm Si Substrates: Effects of Base Thickness, Base and Sub-Collector Doping Concentrations
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Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors With High Current Amplification (Adv. Electron. Mater. 3/2019)
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Total Dose Effects on 4h-SiC Bipolar Junction Transistors
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4h-SiC/Si Heterojunction Bipolar Transistors Fabricated by Surface Activated Bonding
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Thermally Stable Structure of InGaP/GaAs Hetero-Junction Bipolar Transistor: Dual-Emitter Structure
Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
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